Quasi-free Standing Epitaxial Graphene on SiC by Hydrogen

Nov 10, 2009 - of scattering centers into the graphene layer. So, for a ... Figure 2 (a) and (b) display LEED patterns for the. (6√3× .... brought ...

0 downloads 10 Views 729KB Size

Recommend Documents

launched a huge research interest in this novel material which has the potential to become a basic material for electronic devices. ... orientation. [12] For graphene device applications, however, it is of great interest to control the ...... main st

Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents ... eliminated, and it is much easier to imagine creating a substrate of graphene on which an electronic device ... Graphitic films on SiC

and/or observed for few layer graphene including extremely high carrier mobilities, room temperature quantum hall effect, band ... carrier mobilities in the few tens of thousand cm2/V-s range12. Epitaxial graphene also ..... 18. E. D. Palik (ed.), Ha

Using scanning tunneling microscopy with Fe-coated W tips and first-principles calculations, we show that the interface of epitaxial graphene/SiC(0001) is a ...

Jul 18, 2008 - exfoliated layers and rise from ~ 46 to 64 and 74 cm-1 when comparing a monolayer sample with bi- and trilayer graphene, respectively. Despite the broadening, the 2D peak of monolayer epitaxial graphene can still be fitted with a singl

aDepartment of Physics, Pusan National University, Busan 46241, Korea. bPohang Accelerator Laboratory, Pohang University of Science and Technology, ...

Oct 20, 2017 - S. Massidda, “Anisotropic exchange interaction between nonmagnetic ... nine and ferromagnetic europium oxide,” Chem. Com- · mun.

Feb 4, 2012 - layer distance appears at the trough of the ripple in first. GNR layer. The corresponding height profile of GNRs on SiC along the length direction ...

(i) An etching window is opened in Hall bar area. ..... 2012, 100, 253109. .... Devices were selected by room-temperature four-terminal measurements of the sheet .... Mention of commercial products or services does not imply endorsement by ...

Jan 21, 2010 - thin Bernal-stacked graphite sample. The origin of multilayer ... sheet.14,17–25 Its relevant electronic signature is the dispersion of the π- and ...

Sep 21, 2012 - arXiv:1209.4744v1 [cond-mat.mes-hall] 21 Sep 2012 ... 1Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley ...

... were carried out in an ultrahigh vacuum chamber equipped with a SPECS ... measured spectra for selected points on the grid is evident from Figure S3.

and network architectures relying on spin information processing, well beyond present spintronics applications, can now be ..... 10, 527-531 (2011). 30. Dash, S. P. et al. Spin precession and inverted Hanle effect in a semiconductor near a finite- ro

This ratio is analyzed with a model involving the escape depths of ... Images of the terraces sometimes reveal faint networks of "snowflake-like" ... reflectivity data to obtain local graphene coverage as follows: (i) at each pixel a reflectivity cur

into field effect transistors with fmax of 14 GHz. Introduction .... microscopy (STM: McAllister Technical Services) and field emission transmission elec- ... One difference was the observation of a transitional layer between the Si-face substrate an

theoretical14,15 and experimental studies on EG, e.g. X-ray diffraction (XRD)15,16 and scanning tunneling microscopy (STM)17,18, have also been carried out. However .... To illustrate the origin of the strain, Figure 3 shows the schematic (top view (

Nov 20, 2008 - of defect-free heterostructrures [11]. It is therefore of ... ual sample were traced using plot digitizing software at a sampling rate of ... SiC contracts. The difference ∆α(T) in the coefficients of thermal expansion is nearly con

2Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK. 3Chalmers ..... In order to support the hypothesis of QFS 1LG being less.

Jul 9, 2009 - Atlanta, Georgia 30332, USA. The unique electronic properties of graphene offer the possibility that .... Figure 4(a) enough to match the UHV data. Another process variable used in recent graphene growth exper- ... 04-ER46170 and the MR

Aug 17, 2017 - fulfilled its protective role, we also observed a significant decrease in the EG carrier mobility [42]. This is ..... the values achieved in our previous samples, where we had used the same IDT design and nominal ..... interconnections

seem to be either chemical vapor deposition on a metal1,2. (CVD growth) or heating of a .... 1.4K, for which the cooling was initiated from 46K with different gate ...

Jun 30, 2011 - The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We fin

Feb 22, 2012 - Numerical procedure: LAMMPS software and empirical potentials. We conduct the MD ... third C-rich layers and resume a separation of 1 Å ... (Color online) Growth of monolayer graphene on 6H–SiC substrate simulated with.

Oct 16, 2012 - 1Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan. 2Institute of Solid State ...